Studies of 6H-SiC devices
文献类型：期刊论文
| 作者 | Wang SR ; Liu ZL |
| 刊名 | current applied physics
 |
| 出版日期 | 2002 |
| 卷号 | 2期号:5页码:393-399 |
| ISSN号 | 1567-1739 |
| 关键词 | SiC Schottky pn junction diodes MOS capacitor JUNCTION DIODES |
| 通讯作者 | wang sr,chinese acad sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | silicon carbide (sic) is recently receiving increased attention due to its unique electrical and thermal properties. it has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. the fabrication processes and characterization of basic device on 6h-sic were systematically studied. the main works are summarized as follows:the homoepitaxial growth on the commercially available single-crystal 6h-sic wafers was performed in a modified gas source molecular beam epitaxy system. the mesa structured p(+)n junction diodes on the material were fabricated and characterized. the diodes showed a high breakdown voltage of 800 v at room temperature. they operated with good rectification characteristics from room temperature to 673 k.using thermal evaporation, ti/6h-sic schottky barrier diodes were fabricated. they showed good rectification characteristics from room temperature to 473 k. using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 v.n-type 6h-sic mos capacitors were fabricated and characterized. under the same growing conditions, the quality of polysilicon gate capacitors was better than al. in addition, sic mos capacitors had good tolerance to gamma rays. (c) 2002 published by elsevier science b.v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11734]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang SR,Liu ZL. Studies of 6H-SiC devices[J]. current applied physics,2002,2(5):393-399. |
| APA | Wang SR,&Liu ZL.(2002).Studies of 6H-SiC devices.current applied physics,2(5),393-399. |
| MLA | Wang SR,et al."Studies of 6H-SiC devices".current applied physics 2.5(2002):393-399. |
入库方式： OAI收割
来源：半导体研究所
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