Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Ng YF ; Cao YG ; Xie MH ; Wang XL ; Tong SY |
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 81期号:21页码:3960-3962 |
| 关键词 | MISFIT DISLOCATIONS DEFECTS INGAN GAN REDUCTION INDIUM LAYERS FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | xie mh,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china. 电子邮箱地址: mhxie@hkusua.hku.hk |
| 中文摘要 | epitaxial growth of inn on gan(0001) by plasma-assisted molecular-beam epitaxy is investigated over a range of growth parameters including source flux and substrate temperature. combining reflection high-energy electron diffraction (rheed) and scanning tunneling microscopy (stm), we establish a relationship between film growth mode and the deposition condition. both two-dimensional (2d) and three-dimensional (3d) growth modes of the film are observed. for 2d growth, sustained rheed intensity oscillations are recorded while stm reveals 2d nucleation islands. for 3d growth, less than three oscillation periods are observed indicating the stranski-krastanov (sk) growth mode of the film. simultaneous measurements of (reciprocal) lattice constant by rheed suggest a gradual relaxation of the strain in film, which commences during the first bilayer (bl) deposition and almost completes after 2-4 bls. for sk growth, 3d islanding initiates after the strain has mostly been relieved, presumably by dislocations, so the islands are likely strain free. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11736]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ng YF,Cao YG,Xie MH,et al. Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy[J]. applied physics letters,2002,81(21):3960-3962. |
| APA | Ng YF,Cao YG,Xie MH,Wang XL,&Tong SY.(2002).Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy.applied physics letters,81(21),3960-3962. |
| MLA | Ng YF,et al."Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy".applied physics letters 81.21(2002):3960-3962. |
入库方式： OAI收割
来源：半导体研究所
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