Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells
文献类型：期刊论文
| 作者 | Luo XD ; Hu CY ; Xu ZY ; Luo HL ; Wang YQ ; Wang JN ; Ge WK |
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 81期号:20页码:3795-3797 |
| 关键词 | MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE BAND ALIGNMENT GAAS DOTS LASERS OPERATION OFFSETS |
| ISSN号 | 0003-6951 |
| 通讯作者 | luo xd,chinese acad sci,inst semicond,nlsm,beijing 100083,peoples r china. |
| 中文摘要 | gaassb/gaas single quantum wells grown by molecular-beam epitaxy are studied by selectively excited photoluminescence measurements. we have simultaneously observed the photoluminescence (pl) from both type-i and type-ii transitions in the samples. the two transitions exhibit different pl behavior under different excitation energies. as expected, the peak energy of the type-i emission remains constant in the entire excitation energy range we used, while the type-ii transition shows a significant blueshift with increasing excitation energy. the observed blueshift can be well explained by an electron-hole charge separation model at interface. this result, along with the excitation-power-dependent pl and the measured longer carrier decay time, provides more direct information on the type-ii nature of the band alignment in gaassb/gaas quantum well structures. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11746]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo XD,Hu CY,Xu ZY,et al. Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells[J]. applied physics letters,2002,81(20):3795-3797. |
| APA | Luo XD.,Hu CY.,Xu ZY.,Luo HL.,Wang YQ.,...&Ge WK.(2002).Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells.applied physics letters,81(20),3795-3797. |
| MLA | Luo XD,et al."Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells".applied physics letters 81.20(2002):3795-3797. |
入库方式： OAI收割
来源：半导体研究所
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