Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films
文献类型：期刊论文
| 作者 | Liu FM ; Wang TM ; Zhang LD ; Li GH ; Han HX |
| 刊名 | journal of luminescence
 |
| 出版日期 | 2002 |
| 卷号 | 99期号:3页码:273-281 |
| 关键词 | nanocrystals photoluminescence quantum confinement GaSb Ga0.62In0.38Sb LIQUID-PHASE EPITAXY X-RAY PHOTOELECTRON GALLIUM ANTIMONIDE COMPOSITE FILMS QUANTUM DOTS RAMAN SPECTROSCOPY DEPOSITION SPECTRA MATRIX |
| ISSN号 | 0022-2313 |
| 通讯作者 | liu fm,beijing univ aeronaut & astronaut,sch sci,ctr phys mat & chem,beijing 100083,peoples r china. |
| 中文摘要 | the gasb and ga0.62in0.38sb nanocrystals were embedded in the sio2 films by radio-frequency magnetron co-sputtering and were grown on gasb and si substrates at different temperatures. we present results on the 10k excitonic photoluminescence (pl) properties of nanocrystalline gasb and ga0.62in0.38sb as a function of their size. the measurements show that the pl of the gasb and ga0.62in0.38sb nanocrystallites follows the quantum confinement model very closely. by using deconvolution of pl spectra, origins of structures in pl were identified. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11752]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu FM,Wang TM,Zhang LD,et al. Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films[J]. journal of luminescence,2002,99(3):273-281. |
| APA | Liu FM,Wang TM,Zhang LD,Li GH,&Han HX.(2002).Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films.journal of luminescence,99(3),273-281. |
| MLA | Liu FM,et al."Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films".journal of luminescence 99.3(2002):273-281. |
入库方式： OAI收割
来源：半导体研究所
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