Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler
文献类型：期刊论文
| 作者 | Zhang XL ; Zhang FQ ; Song SL ; Chen NF ; Wang ZG ; Lin LY |
| 刊名 | chinese science bulletin
 |
| 出版日期 | 2002 |
| 卷号 | 47期号:21页码:1780-1782 |
| 关键词 | electrochemistry C-V magnetic semiconductor GaMnSb III-V SEMICONDUCTORS MAGNETOTRANSPORT PROPERTIES TRANSPORT-PROPERTIES (IN MAGNETORESISTANCE HETEROSTRUCTURES (GA GAAS MN)AS/(GA MN)AS AL)SB |
| ISSN号 | 1001-6538 |
| 通讯作者 | zhang xl,chinese acad sci,inst semicond,key lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | depth profiles of carrier concentrations in gamnsb/gasb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of tiron. the carrier concentration in gamnsb/gasb measured by this method is coincident with the results of hall and x-ray diffraction measurements. it is indicated that most of the mn atoms in gamnsb take the site of ga, play a role of acceptors, and provide shallow acceptor level(s). |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11760]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang XL,Zhang FQ,Song SL,et al. Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler[J]. chinese science bulletin,2002,47(21):1780-1782. |
| APA | Zhang XL,Zhang FQ,Song SL,Chen NF,Wang ZG,&Lin LY.(2002).Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler.chinese science bulletin,47(21),1780-1782. |
| MLA | Zhang XL,et al."Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler".chinese science bulletin 47.21(2002):1780-1782. |
入库方式： OAI收割
来源：半导体研究所
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