Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE
文献类型：期刊论文
| 作者 | Luo MC ; Wang XL ; Li JM ; Liu HX ; Wang L ; Sun DZ ; Zeng YP ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 244期号:3-4页码:229-235 |
| ISSN号 | 0022-0248 |
| 关键词 | atomic force microscopy Raman transmission electron microscopy molecular beam epitaxy aluminium nitride ELECTRON-AFFINITY GAN SI(111) |
| 通讯作者 | luo mc,chinese acad sci,inst semicond,novel semicond mat lab,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | epitaxial growth of aln has been performed by molecular beam epitaxy (mbe) with ammonia. the structural properties of materials were studied by cross-sectional transmission electron microscopy (tem), x-ray diffraction (xrd), and atomic force microscopy (afm). xrd and tem diffraction pattern confirm the aln is single crystalline 2h-polytype with the epitaxial relationship of (0001)alnparallel to(111)si, [11 (2) over bar0](aln)parallel to[110](si), [10 (1) over bar0](aln)parallel to[11 (2) over bar](si). micro-raman scattering measurement shows that the e-2 (high) and a(1) (lo) phonon mode shift 9 cm(-1) toward the low frequency, which shows the existence of large tensile strain in the aln films. furthermore, the appearance of forbidden a, (to) mode and its anomalous shift toward high frequency was found and explained. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11768]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo MC,Wang XL,Li JM,et al. Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE[J]. journal of crystal growth,2002,244(3-4):229-235. |
| APA | Luo MC.,Wang XL.,Li JM.,Liu HX.,Wang L.,...&Lin LY.(2002).Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE.journal of crystal growth,244(3-4),229-235. |
| MLA | Luo MC,et al."Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE".journal of crystal growth 244.3-4(2002):229-235. |
入库方式： OAI收割
来源：半导体研究所
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