The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
文献类型：期刊论文
| 作者 | Chen Z ; Lu DC ; Han P ; Liu XL ; Wang XH ; Li YF ; Yuan HR ; Lu Y ; Bing LD ; Zhu QS ; Wang ZG ; Wang XF ; Yan L |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 243期号:1页码:19-24 |
| 关键词 | nanostructures metalorganic chemical vapor deposition nitrides SELF-ORGANIZED GROWTH EPITAXIAL-GROWTH GAAS GAN PHOTOLUMINESCENCE SURFACTANT ALGAAS WIRE |
| ISSN号 | 0022-0248 |
| 通讯作者 | chen z,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | multi-sheet ingan/gan quantum dots (qds) were grown successfully by surface passivation processing and low-temperature growth in metalorganic chemical vapor deposition. this method based on the principle of increasing the energy barrier of adatom hopping by surface passivation and low-temperature growth, is quite different from present methods. the ingan quantum dots in the first layer of about 40-nm-wide and 15-nm-high grown by this method were revealed by atomic force microscopy. the ingan qds in upper layer grew bigger. to our knowledge, the current-voltage characteristics of multi-sheet ingan/gan qds were measured for the fist time. two kinds of resonance-tunneling-current features were observed which were attributed to the low-dimensional localization effect. some current peaks only appeared in positive voltage for sample due to the non-uniformity of the qds in the structure. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11776]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Z,Lu DC,Han P,et al. The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method[J]. journal of crystal growth,2002,243(1):19-24. |
| APA | Chen Z.,Lu DC.,Han P.,Liu XL.,Wang XH.,...&Yan L.(2002).The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method.journal of crystal growth,243(1),19-24. |
| MLA | Chen Z,et al."The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method".journal of crystal growth 243.1(2002):19-24. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。