Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
文献类型：期刊论文
| 作者 | Li DB
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 243期号:1页码:71-76 |
| 关键词 | dislocation strain molecular beam epitaxy organometallic vapor phase epitaxy semiconductor III-V materials CRITICAL THICKNESS HETEROEPITAXIAL GROWTH LAYERS OXIDATION EPITAXY |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang zc,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | in order to overcome the large lattice mismatch in the heteroepitaxy, a new patterned compliant substrate method has been introduced, which has overcome the disadvantages of previously published methods. inp film of thickness 800 nm was directly grown on this substrate. scanning electron microscopy (sem) has shown that good surface morphology has been obtained. in addition, photoluminescence (pl) and double crystal x-ray diffraction (dcxrd) study have shown that the residual strain has been reduced, and that the structure quality has been improved. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11780]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li DB. Strain relaxation of InP film directly grown on GaAs patterned compliant substrate[J]. journal of crystal growth,2002,243(1):71-76. |
| APA | Li DB.(2002).Strain relaxation of InP film directly grown on GaAs patterned compliant substrate.journal of crystal growth,243(1),71-76. |
| MLA | Li DB."Strain relaxation of InP film directly grown on GaAs patterned compliant substrate".journal of crystal growth 243.1(2002):71-76. |
入库方式： OAI收割
来源：半导体研究所
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