A novel contactless method for characterization of semiconductors: Surface electron beam induced voltage in scanning electron microscopy
文献类型：期刊论文
| 作者 | Zhu SQ ; Rau EI ; Yang FH ; Zheng HZ |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 19期号:9页码:1329-1332 |
| ISSN号 | 0256-307x |
| 通讯作者 | zhu sq,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | we present a novel contactless and nondestructive method called the surface electron beam induced voltage (sebiv) method for characterizing semiconductor materials and devices. the sebiv method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (sem). the core part of the sebiv detection set-up is a circular metal detector placed above the sample surface. the capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64 pf it is large enough for the detection of the induced surface potential. the irradiation mode of electron beam (e-beam) influences the signal generation. when the e-beam irradiates on the surface of semiconductors continuously, a differential signal is obtained. the real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection. the polarity of induced potential depends on the structure of potential barriers and surface states of samples. the contrast of sebiv images in sem changes with irradiation time and e-beam intensity. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11790]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu SQ,Rau EI,Yang FH,et al. A novel contactless method for characterization of semiconductors: Surface electron beam induced voltage in scanning electron microscopy[J]. chinese physics letters,2002,19(9):1329-1332. |
| APA | Zhu SQ,Rau EI,Yang FH,&Zheng HZ.(2002).A novel contactless method for characterization of semiconductors: Surface electron beam induced voltage in scanning electron microscopy.chinese physics letters,19(9),1329-1332. |
| MLA | Zhu SQ,et al."A novel contactless method for characterization of semiconductors: Surface electron beam induced voltage in scanning electron microscopy".chinese physics letters 19.9(2002):1329-1332. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。