Study on pollution for the photoelectronic material InP
文献类型：期刊论文
| 作者 | Xu JC ; Ding XP ; Chen DQ |
| 刊名 | spectroscopy and spectral analysis
 |
| 出版日期 | 2002 |
| 卷号 | 22期号:4页码:550-551 |
| 关键词 | mass spectrum analysis photoluminescence electron concentration electron mobility |
| ISSN号 | 1000-0593 |
| 通讯作者 | xu jc,capital normal univ,dept phys,beijing 100037,peoples r china. |
| 中文摘要 | the mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material inp were given. the hall coefficient, charge carrier concentration and hall mobility were determined. experimental results indicate that the pollution of silicon is predominant. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11798]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu JC,Ding XP,Chen DQ. Study on pollution for the photoelectronic material InP[J]. spectroscopy and spectral analysis,2002,22(4):550-551. |
| APA | Xu JC,Ding XP,&Chen DQ.(2002).Study on pollution for the photoelectronic material InP.spectroscopy and spectral analysis,22(4),550-551. |
| MLA | Xu JC,et al."Study on pollution for the photoelectronic material InP".spectroscopy and spectral analysis 22.4(2002):550-551. |
入库方式： OAI收割
来源：半导体研究所
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