Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 19期号:8页码:1203-1206 |
| ISSN号 | 0256-307x |
| 关键词 | BAND LUMINESCENCE GAAS LOCALIZATION EMISSION BEHAVIOR SHIFT INGAN |
| 通讯作者 | liang xg,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | photoluminescence (pl) spectra of gainnas/gaas multiple quantum wells grown on a gaas substrate by molecular beam epitaxy are measured in a range of temperatures and excitation power densities. the energy position of the dominant pl peak shows an anomalous s-shape temperature dependence instead of the varshni relation. by careful inspection, especially for the pl under lower excitation power density, two near bandedge peaks are well identified. these are assigned to carriers localized in nitrogen-induced bound states and interband excitonic recombinations, respectively. it is suggested that the temperature-induced switch of such two luminescence peaks in relative intensity causes a significant mechanism responsible for the s-shape shift observed in gainnas. a quantitative model based on the thermal depopulation of carriers is used to explain the temperature dependence of the pl peak related to n-induced bound states. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11806]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells[J]. chinese physics letters,2002,19(8):1203-1206. |
| APA | Jiang DS.(2002).Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells.chinese physics letters,19(8),1203-1206. |
| MLA | Jiang DS."Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells".chinese physics letters 19.8(2002):1203-1206. |
入库方式： OAI收割
来源：半导体研究所
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