In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
文献类型：期刊论文
| 作者 | Sun GS ; Luo MC ; Wang L ; Zhu SR ; Li JM ; Zeng YP ; Lin LY |
| 刊名 | silicon carbide and related materials 2001 pts 1 and 2 proceedings
 |
| 出版日期 | 2002 |
| 卷号 | 389-3期号:0页码:339-342 |
| 关键词 | 3C-SiC in-situ doping low-pressure CVD sapphire substrate CHEMICAL-VAPOR-DEPOSITION COMPETITION EPITAXY |
| ISSN号 | 0255-5476 |
| 通讯作者 | sun gs,chinese acad sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | the heteroepitaxial growth of n-type and p-type 3c-sic on (0001) sapphire substrates has been performed with a supply of sih4+c2h4+h-2 system by introducing ammonia (nh3) and diborane (b2h6) precursors, respectively, into gas mixtures. intentionally incorporated nitrogen impurity levels were affected by changing the si/c ratio within the growth reactor. as an acceptor, boron can be added uniformly into the growing 3c-sic epilayers. nitrogen-doped 3c-sic epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11816]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun GS,Luo MC,Wang L,et al. In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD[J]. silicon carbide and related materials 2001 pts 1 and 2 proceedings,2002,389-3(0):339-342. |
| APA | Sun GS.,Luo MC.,Wang L.,Zhu SR.,Li JM.,...&Lin LY.(2002).In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD.silicon carbide and related materials 2001 pts 1 and 2 proceedings,389-3(0),339-342. |
| MLA | Sun GS,et al."In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD".silicon carbide and related materials 2001 pts 1 and 2 proceedings 389-3.0(2002):339-342. |
入库方式： OAI收割
来源：半导体研究所
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