Micro-Raman study on hydrogenated protocrystalline silicon films
文献类型：期刊论文
| 作者 | Zhang SB ; Liao XB ; An L ; Yang FH ; Kong GL ; Wang YQ ; Xu YY ; Chen CY ; Diao HW |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2002 |
| 卷号 | 51期号:8页码:1811-1815 |
| 关键词 | amorphous silicon film Raman scattering microstructure SI-H FILMS MICROCRYSTALLINE SILICON AMORPHOUS SI LIGHT-SCATTERING SPECTRA |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhang sb,chinese acad sci,inst semicond,state key lab surface phys,beijing 100083,peoples r china. |
| 中文摘要 | good quality hydrogenated protocrystalline silicon films were successfully prepared by radio frequency plasma enhanced chemical vapor deposition (pecvd) with various hydrogen dilution ratios (r = ([h-2]/[sih4]) from 10 to 100). the photosensitivity of the films is up to 10(6) under the light intensity of 50mw.cm(-2). the microstructure of the films was studied by micro-region raman scattering spectra at room temperature. the deconvolution of the raman spectra by gaussion functions shows that the films deposited under low hydrogen dilution ratios (r < 33) exhibit typical amorphous properties, while the films deposited under high hydrogen dilution ratios (r > 50) possess a diphasic structure, with increasing crystalline volume fraction with r. the size of the crystallites in the diphasic films is about 2.4 mm, which was deduced from the phonon confinement model. the intermediate range order of the silicon film increases with increasing hydrogen dilution ratio. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11820]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SB,Liao XB,An L,et al. Micro-Raman study on hydrogenated protocrystalline silicon films[J]. acta physica sinica,2002,51(8):1811-1815. |
| APA | Zhang SB.,Liao XB.,An L.,Yang FH.,Kong GL.,...&Diao HW.(2002).Micro-Raman study on hydrogenated protocrystalline silicon films.acta physica sinica,51(8),1811-1815. |
| MLA | Zhang SB,et al."Micro-Raman study on hydrogenated protocrystalline silicon films".acta physica sinica 51.8(2002):1811-1815. |
入库方式： OAI收割
来源：半导体研究所
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