Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | microwave and optical technology letters
 |
| 出版日期 | 2002 |
| 卷号 | 34期号:5页码:333-336 |
| 关键词 | GaInNAs quantum wells resonant cavity enhanced photodetector WDM networks |
| ISSN号 | 0895-2477 |
| 通讯作者 | zhang rk,beijing univ post & telecom,pob 66,beijing 100876,peoples r china. |
| 中文摘要 | characteristics of a 1.3-mum gainnas rce pd with respect to the incident light angle were analyzed both in theoretical simulation and experiments. the results show the influence can be neglected when the light incidence angle is less than 3degrees. this is a requirement for the pd to be applied in wdm networks. (c) 2002 wiley periodicals, inc. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11824]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect[J]. microwave and optical technology letters,2002,34(5):333-336. |
| APA | Xu YQ.(2002).Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect.microwave and optical technology letters,34(5),333-336. |
| MLA | Xu YQ."Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect".microwave and optical technology letters 34.5(2002):333-336. |
入库方式： OAI收割
来源：半导体研究所
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