Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance
文献类型：期刊论文
| 作者 | Dong HW ; Zhao YW ; Zhang YH ; Jiao JH ; Zhao JQ ; Lin LY |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2002 |
| 卷号 | 92期号:4页码:1968-1970 |
| 关键词 | FE-DOPED INP SEMIINSULATING INP UNDOPED INP SPECTROSCOPY WAFER UNIFORMITY PRESSURE TRAPS |
| ISSN号 | 0021-8979 |
| 通讯作者 | dong hw,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | deep levels in semi-insulating (si) inp obtained by annealing in iron phosphide (ip) ambiance have been characterized by optical transient current spectroscopy (otcs). compared with the otcs result of the si inp prepared by annealing in pure phosphorus (pp) ambiance, the ip si inp presents only two traps with activation energies of 0.20 and 0.63 ev, respectively. the results suggest that the diffusion of fe-atoms suppresses the formation of a few defects in the ip si inp. the nature of deep levels in the ip and pp si inp has been discussed on the basis of these results. the relation between material property and defects in those si inp has also been revealed. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11834]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Dong HW,Zhao YW,Zhang YH,et al. Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance[J]. journal of applied physics,2002,92(4):1968-1970. |
| APA | Dong HW,Zhao YW,Zhang YH,Jiao JH,Zhao JQ,&Lin LY.(2002).Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance.journal of applied physics,92(4),1968-1970. |
| MLA | Dong HW,et al."Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance".journal of applied physics 92.4(2002):1968-1970. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。