Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
文献类型：期刊论文
| 作者 | Wang H ; Shang SX ; Yao WF ; Hou Y ; Xu XH ; Wang D ; Wang M ; Yu JZ |
| 刊名 | ferroelectrics
 |
| 出版日期 | 2002 |
| 卷号 | 271期号:0页码:1707-1713 |
| 关键词 | Bi2Ti2O7 thin film MOCVD (111) orientation CHEMICAL-VAPOR-DEPOSITION CRYSTAL THIN-FILMS |
| ISSN号 | 0015-0193 |
| 通讯作者 | wang h,shandong univ,state key lab crystal mat,jinan 250100,peoples r china. |
| 中文摘要 | the growth of bi2ti2o7 films with (111) orientation on si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(apmocvd) technique at 480similar to550 degreesc is presented. the films were characterized by x-ray diffraction analysis, atomic force microscopy and electron diffraction. the results show high quality bi2ti2o7 films with smooth shinning surface. the dielectric properties and c-v characterization of the films were studied. the dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. the charge storage density was 31.9fc/mum(2). the resistivity is higher than 1x10(12) omega. .cm under the applied voltage of 5v. the bi2ti2o7 films are suitable to be used as a new insulating gate material in dynamic random access memory (dram). |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11836]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang H,Shang SX,Yao WF,et al. Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD[J]. ferroelectrics,2002,271(0):1707-1713. |
| APA | Wang H.,Shang SX.,Yao WF.,Hou Y.,Xu XH.,...&Yu JZ.(2002).Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD.ferroelectrics,271(0),1707-1713. |
| MLA | Wang H,et al."Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD".ferroelectrics 271.0(2002):1707-1713. |
入库方式： OAI收割
来源：半导体研究所
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