Modulation spectroscopy of GaAs covered by InAs quantum dots
文献类型：期刊论文
| 作者 | Xu B ; Jin P; Li CM
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 19期号:7页码:1010-1012 |
| 关键词 | FRANZ-KELDYSH OSCILLATIONS MICROSCOPY SURFACES ISLANDS LAYER |
| ISSN号 | 0256-307x |
| 通讯作者 | jin p,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | contactless: electroreflectance has been employed at room temperature to study the fermi level pinning at undoped-n(+) gaas surfaces covered by 1.6 and 1.8 monolayer (ml) inas quantum dots (qds). it is shown that the 1.8 ml inas qd moves the fermi level at gaas surface to the valence band maximum by about 70 mev compared to bare gaas, whereas 1.6 ml inas on gaas does not modify the fermi level, it is confirmed that the modification of the 1.8 ml inas deposition on the fermi level at gaas surface is due to the qds, which are surrounded by some oxidized inas facets, rather than the wetting layer. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11838]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Jin P,Li CM. Modulation spectroscopy of GaAs covered by InAs quantum dots[J]. chinese physics letters,2002,19(7):1010-1012. |
| APA | Xu B,Jin P,&Li CM.(2002).Modulation spectroscopy of GaAs covered by InAs quantum dots.chinese physics letters,19(7),1010-1012. |
| MLA | Xu B,et al."Modulation spectroscopy of GaAs covered by InAs quantum dots".chinese physics letters 19.7(2002):1010-1012. |
入库方式： OAI收割
来源：半导体研究所
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