GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique
文献类型：期刊论文
| 作者 | Zhou JP ; Chen NF ; Zhang FQ ; Song SL ; Chai CL ; Yang SY ; Liu ZK ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 242期号:3-4页码:389-394 |
| 关键词 | Auger electron spectroscopy X-ray diffraction X-ray photoelectron spectroscopy ion beam epitaxy semiconducting gadolinium silicide SEMICONDUCTING SILICIDES MAGNETIC SEMICONDUCTORS TRANSITION INSULATOR SILICON FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhou jp,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | semiconducting gadolinium silicide gdxsi samples were prepared by mass-analyzed low-energy dual ion beam epitaxy technique. auger electron spectroscopy depth profiles indicate that the gadolinium ions are implanted into the single-crystal silicon substrate and formed 20 nm thick gdxsi film. x-ray double-crystal diffraction measurement shows that there is no new phase formed. the xps spectra show that one type of silicon peaks whose binding energy is between that of silicide and silicon dioxide, and the gadolinium peak of binding energy is between that of metal gd and gd2o3. all of these results indicate that an amorphous semiconductor is formed. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11848]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou JP,Chen NF,Zhang FQ,et al. GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique[J]. journal of crystal growth,2002,242(3-4):389-394. |
| APA | Zhou JP.,Chen NF.,Zhang FQ.,Song SL.,Chai CL.,...&Lin LY.(2002).GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique.journal of crystal growth,242(3-4),389-394. |
| MLA | Zhou JP,et al."GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique".journal of crystal growth 242.3-4(2002):389-394. |
入库方式： OAI收割
来源：半导体研究所
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