Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD
文献类型：期刊论文
| 作者 | Zheng XH ; Feng ZH ; Wang YT ; Zheng WL ; Jia QJ ; Jiang XM ; Yang H ; Liang JW |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 242期号:1-2页码:124-128 |
| 关键词 | nucleation layers X-ray diffraction metalorganic chemical vapor deposition gallium compounds nitrides LIGHT-EMITTING-DIODES CHEMICAL-VAPOR-DEPOSITION AIN BUFFER LAYER GROWN GAN SAPPHIRE SUBSTRATE QUALITY FILMS BLUE TEMPERATURE EVOLUTION |
| ISSN号 | 0022-0248 |
| 通讯作者 | zheng xh,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the structural characteristic of cubic gan (c-gan) nucleation layers on gaas(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by x-ray diffraction (xrd) measurements, using a huber five-circle diffractometer and an intense synchrotron x-ray source. the xrd results indicate that the c-gan nucleation layers are highly crystallized. phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the gan nucleation layers show exactly cubic symmetrical structure. the gan(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. possible explanations are suggested. the pole figures of {1 0 (1) over bar 0} reflections from h-gan inclusions show that the parasitic h-gan originates from the c-gan nucleation layers. the coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11858]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng XH,Feng ZH,Wang YT,et al. Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD[J]. journal of crystal growth,2002,242(1-2):124-128. |
| APA | Zheng XH.,Feng ZH.,Wang YT.,Zheng WL.,Jia QJ.,...&Liang JW.(2002).Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD.journal of crystal growth,242(1-2),124-128. |
| MLA | Zheng XH,et al."Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD".journal of crystal growth 242.1-2(2002):124-128. |
入库方式： OAI收割
来源：半导体研究所
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