Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour
文献类型：期刊论文
| 作者 | Dong HW ; Zhao YW ; Lu HP ; Jiao JH ; Zhao JQ ; Lin LY |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2002 |
| 卷号 | 17期号:6页码:570-574 |
| 关键词 | FE-DOPED INP SEMIINSULATING INP ELECTRICAL-PROPERTIES ROOM-TEMPERATURE UNIFORMITY PRESSURE INGOT |
| ISSN号 | 0268-1242 |
| 通讯作者 | dong hw,chinese acad sci,ctr mat sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have investigated the photoluminescence mapping characteristics of semi-insulating (si) inp wafers obtained by annealing in iron phosphide ambience (fep2-annealed). compared with as-grown fe-doped and undoped si inp wafers prepared by annealing in pure phosphorus vapour (p-annealed), the fep2-annealed st inp wafer has been found to exhibit a better photoluminescence uniformity. radial hall measurements also show that there is a better resistivity uniformity on the fep2-annealed sl inp wafer. when comparing the distribution of deep levels between the annealed wafers measured by optical transient current spectroscopy, we find that the incorporation of iron atoms into the sl inp suppresses the formation of a few defects. the correlation observed in this study implies that annealing in iron phosphorus ambience makes fe atoms diffuse uniformly and occupy the indium site in the sl inp lattice. as it stands, we believe that annealing undoped conductive inp in iron phosphide vapour is an effective means to obtain semi-insulating inp wafers with superior uniformity. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11860]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Dong HW,Zhao YW,Lu HP,et al. Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour[J]. semiconductor science and technology,2002,17(6):570-574. |
| APA | Dong HW,Zhao YW,Lu HP,Jiao JH,Zhao JQ,&Lin LY.(2002).Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour.semiconductor science and technology,17(6),570-574. |
| MLA | Dong HW,et al."Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour".semiconductor science and technology 17.6(2002):570-574. |
入库方式： OAI收割
来源：半导体研究所
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