A novel line-order of InAs quantum dots on GaAs
文献类型：期刊论文
| 作者 | Li CM ; Xu B; Jin P
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 241期号:1-2页码:69-73 |
| 关键词 | low dimensional structures strain molecular beam epitaxy quantum dots semiconducting III-V materials SHAPE TRANSITION PHOTOLUMINESCENCE FABRICATION DEPOSITION WIRES SITU |
| ISSN号 | 0022-0248 |
| 通讯作者 | meng xq,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a novel line-order of inas quantum dots (qds) along the [1, 1, 0] direction on gaas substrate has been prepared by self-organized growth. after 2.5 monolayer inas deposition, qds in the first layer of multi-layer samples started to gather in a line. owing to the action of strong stress between layers, almost all the dots of the fourth layer gathered in lines. the dots lining up tightly are actually one-dimensional superlattice of qds, of which the density of electronic states is different from that of isolated qds or quantum wires. the photoluminescence spectra of our multi-layer qd sample exhibited a feature of very broad band so that it is suitable for the active medium of super luminescent diode. the reason of dots lining up is attributed to the hill-and-valley structure of the buffer, anisotropy and different diffusion rates in the different directions on the buffer and strong stress between qd layers. (c) 2002 published by elsevier science b. v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11878]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li CM,Xu B,Jin P. A novel line-order of InAs quantum dots on GaAs[J]. journal of crystal growth,2002,241(1-2):69-73. |
| APA | Li CM,Xu B,&Jin P.(2002).A novel line-order of InAs quantum dots on GaAs.journal of crystal growth,241(1-2),69-73. |
| MLA | Li CM,et al."A novel line-order of InAs quantum dots on GaAs".journal of crystal growth 241.1-2(2002):69-73. |
入库方式： OAI收割
来源：半导体研究所
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