Photoluminescence and capacitance transients in highly Mg-doped GaN
文献类型：期刊论文
| 作者 | Lu L ; Yang CL ; Yan H ; Yang H ; Wang Z ; Wang J ; Ge W |
| 刊名 | applied physics a-materials science & processing
 |
| 出版日期 | 2002 |
| 卷号 | 75期号:3页码:441-444 |
| 关键词 | P-TYPE GAN BAND LUMINESCENCE ZNSE |
| ISSN号 | 0947-8396 |
| 通讯作者 | lu l,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionization energies of the shallow and deep mg-related acceptors have been studied, respectively. the 2.989 ev blue-band is attributed to the deep donor-acceptor-pair transitions involving a deep mg-related acceptor at e-v+0.427 ev. the blueshift with increasing excitation power is explained by variation in the contribution of close and distant donor-acceptor-pairs to the luminescence. the redshift with increasing temperature results from thermal release of carriers from close donor-acceptor-pairs. the 3.26 ev near-bandgap peak is attributed to the shallow donor-acceptor-pair transitions involving a shallow mg-related acceptor at e-v+0.223 ev. the relevant thermal ionization energies of the shallow and deep mg-related acceptors, being about e-v+0.16 and e-v+0.50ev, are determined from deep-level transient fourier spectroscopy measurements. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11880]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu L,Yang CL,Yan H,et al. Photoluminescence and capacitance transients in highly Mg-doped GaN[J]. applied physics a-materials science & processing,2002,75(3):441-444. |
| APA | Lu L.,Yang CL.,Yan H.,Yang H.,Wang Z.,...&Ge W.(2002).Photoluminescence and capacitance transients in highly Mg-doped GaN.applied physics a-materials science & processing,75(3),441-444. |
| MLA | Lu L,et al."Photoluminescence and capacitance transients in highly Mg-doped GaN".applied physics a-materials science & processing 75.3(2002):441-444. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。