Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 240期号:3-4页码:368-372 |
| 关键词 | X-ray diffraction etching metalorganic vapor-phase epitaxy nitrides semiconducting III-V materials LIGHT-EMITTING-DIODES VAPOR-PHASE EPITAXY FILMS DISLOCATIONS DENSITY GROWTH LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | feng g,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | the crystallographic tilt of the lateral epitaxial overgrown (leo) gan on sapphire substrate with sinx mask is investiaated by double crystal x-ray diffraction. two wing peaks beside the gan 0002 peak can be observed for the as-grown leo gan. during the selective etching of sinx mask, each wing peak splits into two peaks, one of which disappears as the mask is removed, while the other remains unchanged. this indicates that the crystallographic tilt of the overgrown region is caused not only by the plastic deformation resulted from the bending of threading dislocations, but by the non-uniformity elastic deformation related with the gan, sinx interfacial forces. the widths of these two peaks are also studied in this paper. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11884]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching[J]. journal of crystal growth,2002,240(3-4):368-372. |
| APA | Zhao DG.(2002).Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching.journal of crystal growth,240(3-4),368-372. |
| MLA | Zhao DG."Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching".journal of crystal growth 240.3-4(2002):368-372. |
入库方式： OAI收割
来源：半导体研究所
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