Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
文献类型：期刊论文
| 作者 | Xu B ; Ye XL
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 240期号:3-4页码:395-400 |
| 关键词 | photoluminescence molecular beam epitaxy nanomaterials quantum dots semiconducting III-V materials 1.3 MU-M TEMPERATURE-DEPENDENCE EXCITED-STATES INXGA1-XAS GROWTH LASERS INP |
| ISSN号 | 0022-0248 |
| 通讯作者 | he j,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a high density of 1.02 x 10(11) cm(-2) of inas islands with in(0.15)gao(0.85)as underlying layer has been achieved on gaas (10 0) substrate by solid source molecular beam epitaxy. atomic force microscopy and pl spectra show the size evolution of inas islands. a 1.3 mum photoluminescence (pl) from inas islands with in(0.15)gao(0.85)as underlying layer and ingaas strain-reduced layer has been obtained. our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11886]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL. Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer[J]. journal of crystal growth,2002,240(3-4):395-400. |
| APA | Xu B,&Ye XL.(2002).Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer.journal of crystal growth,240(3-4),395-400. |
| MLA | Xu B,et al."Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer".journal of crystal growth 240.3-4(2002):395-400. |
入库方式： OAI收割
来源：半导体研究所
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