中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect

文献类型:期刊论文

作者Wu HB ; Chang K ; Xia JB
刊名physical review b
出版日期2002
卷号65期号:19页码:art.no.195204
关键词QUANTUM-WELLS BAND OFFSETS TRANSITION EXCITONS BEHAVIOR CD1-XMNXTE EXCHANGE SYSTEM
ISSN号1098-0121
通讯作者wu hb,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要the electronic structure of diluted magnetic semiconductor (dms) superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. the numerical results show that an increase of the in-plane magnetic field renders the dms superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-i band alignment to a type-ii band alignment. the optical transition probability changes from type i to type ii and back to type i like at large magnetic field. this phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the sp-d exchange interaction between the carriers and the magnetic ions. the shear strain induces a strong coupling of the light- and heavy-hole states and a transition of the hole ground states from "light"-hole to "heavy"-hole-like states.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11888]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wu HB,Chang K,Xia JB. Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect[J]. physical review b,2002,65(19):art.no.195204.
APA Wu HB,Chang K,&Xia JB.(2002).Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect.physical review b,65(19),art.no.195204.
MLA Wu HB,et al."Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect".physical review b 65.19(2002):art.no.195204.

入库方式: OAI收割

来源:半导体研究所

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