Numerical analysis of LEC growth of GaAs with an axial magnetic field
文献类型：期刊论文
| 作者 | Li MW ; Hu WR ; Chen NH ; Zeng DL ; Tang ZM |
| 刊名 | international journal of heat and mass transfer
 |
| 出版日期 | 2002 |
| 卷号 | 45期号:13页码:2843-2851 |
| 关键词 | liquid encapsulant Czochralski (LEC) growth of GaAs magnetic field finite-element method boron oxide CRYSTAL-GROWTH HEAT-TRANSFER CONVECTION FLOW SIMULATION MODEL |
| ISSN号 | 0017-9310 |
| 通讯作者 | li mw,chongqing univ,inst power engn,chongqing 400044,peoples r china. |
| 中文摘要 | a set of numerical analyses for momentum and heat transfer for a 3 in. (0.075 m) diameter liquid encapsulant czochralski (lec) growth of single-crystal gaas with or without all axial magnetic field was carried out using the finite-element method. the analyses assume a pseudosteady axisymmetric state with laminar floats. convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the navier-stokes equations for both melt and encapsulant and electric current stream function equations cor melt and crystal lire considered together and solved simultaneously. the effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (c) 2002 published by elsevier science ltd. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11892]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li MW,Hu WR,Chen NH,et al. Numerical analysis of LEC growth of GaAs with an axial magnetic field[J]. international journal of heat and mass transfer,2002,45(13):2843-2851. |
| APA | Li MW,Hu WR,Chen NH,Zeng DL,&Tang ZM.(2002).Numerical analysis of LEC growth of GaAs with an axial magnetic field.international journal of heat and mass transfer,45(13),2843-2851. |
| MLA | Li MW,et al."Numerical analysis of LEC growth of GaAs with an axial magnetic field".international journal of heat and mass transfer 45.13(2002):2843-2851. |
入库方式： OAI收割
来源：半导体研究所
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