Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling
文献类型：期刊论文
| 作者 | Wu MF ; Chen CC ; Zhu DZ ; Zhou SQ ; Vantomme A ; Langouche G ; Zhang BS ; Yang H |
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:22页码:4130-4132 |
| 关键词 | X-RAY-DIFFRACTION ELASTIC STRAIN INGAN |
| ISSN号 | 0003-6951 |
| 通讯作者 | wu mf,peking univ,dept tech phys,beijing 100871,peoples r china. |
| 中文摘要 | rutherford backscattering and channeling have been used to characterize the structure of a gan layer grown on a si(111) substrate. the results show that a 1.26 mum gan epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a si(111) substrate. using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the gan layer, the tetragonal distortion e(t), which is caused by the elastic strain in the epilayer, can be determined. moreover, the depth dependence of the e(t) can be obtained using this technique. a fully relaxed (e(t)=0) gan layer for a thickness <2.8 mum is expected. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11896]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu MF,Chen CC,Zhu DZ,et al. Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling[J]. applied physics letters,2002,80(22):4130-4132. |
| APA | Wu MF.,Chen CC.,Zhu DZ.,Zhou SQ.,Vantomme A.,...&Yang H.(2002).Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling.applied physics letters,80(22),4130-4132. |
| MLA | Wu MF,et al."Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling".applied physics letters 80.22(2002):4130-4132. |
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来源：半导体研究所
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