Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
文献类型：期刊论文
| 作者 | Zhang SM ; Zhao DG
|
| 刊名 | science in china series e-technological sciences
 |
| 出版日期 | 2002 |
| 卷号 | 45期号:3页码:255-260 |
| 关键词 | wafer bonding cubic GaN/GaAs(001) Si-substrate LIGHT-EMITTING-DIODES P-TYPE GAN RESISTANCE CONTACT LASER |
| ISSN号 | 1006-9321 |
| 通讯作者 | sun yp,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. 电子邮箱地址: ypsun@red.semi.ac.cn |
| 中文摘要 | we successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic gan led structure of si substrate. the absorbing gaas substrate was removed by using the chemical solutions of nh4oh : h2o2=1 : 10. sem and pl results show that wafer bonding technique could transfer the cubic gan epilayers uniformly to si without affecting the physical and optical properties of epilayers. xrd result shows that there appeared new peaks related to agga2 and ni4n diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-gan layer during the long annealing process. it is just the reaction that ensures the reliability of the integration of gan with metal and minor contact resistance on the interface. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11904]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SM,Zhao DG. Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate[J]. science in china series e-technological sciences,2002,45(3):255-260. |
| APA | Zhang SM,&Zhao DG.(2002).Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate.science in china series e-technological sciences,45(3),255-260. |
| MLA | Zhang SM,et al."Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate".science in china series e-technological sciences 45.3(2002):255-260. |
入库方式： OAI收割
来源：半导体研究所
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