Fe-diffusion-induced defects in InP annealed in iron phosphide ambient
文献类型：期刊论文
| 作者 | Zhao YW ; Dong HW ; Jiao JH ; Zhao JQ ; Lin LY |
| 刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 2002 |
| 卷号 | 41期号:4a页码:1929-1931 |
| 关键词 | indium phosphide annealing semi-insulating defect diffusion ENCAPSULATED CZOCHRALSKI INP SEMIINSULATING INP PHOTO-LUMINESCENCE INDIUM-PHOSPHIDE UNDOPED INP PHOTOLUMINESCENCE CRYSTALS PRESSURE |
| ISSN号 | 0021-4922 |
| 通讯作者 | zhao yw,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | photoluminescence (pl) and photo induced current transient spectroscopy (picts) have been used to study deep levels in semi-insulating (si) inp prepared by annealing undoped inp in pure phosphorus (pp) and iron phosphide (ip) ambient. defects are much fewer in ip si-inp than in pp si-inp. deep-level-related pl emission could only be detected in ip si-inp. the results indicate that fe diffusion inhibits the thermal formation of a number of defects in annealed inp. a complex defect has been formed in the annealing process in the presence of fe. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11906]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YW,Dong HW,Jiao JH,et al. Fe-diffusion-induced defects in InP annealed in iron phosphide ambient[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2002,41(4a):1929-1931. |
| APA | Zhao YW,Dong HW,Jiao JH,Zhao JQ,&Lin LY.(2002).Fe-diffusion-induced defects in InP annealed in iron phosphide ambient.japanese journal of applied physics part 1-regular papers short notes & review papers,41(4a),1929-1931. |
| MLA | Zhao YW,et al."Fe-diffusion-induced defects in InP annealed in iron phosphide ambient".japanese journal of applied physics part 1-regular papers short notes & review papers 41.4a(2002):1929-1931. |
入库方式： OAI收割
来源：半导体研究所
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