Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing
文献类型：期刊论文
| 作者 | Wang YQ ; Liao XB ; Diao HW ; Zhang SB ; Xu YY ; Chen CY ; Chen WD ; Kong GL |
| 刊名 | chinese physics
 |
| 出版日期 | 2002 |
| 卷号 | 11期号:5页码:492-495 |
| 关键词 | polycrystalline silicon film rapid thermal processing microstructure CHEMICAL-VAPOR-DEPOSITION AMORPHOUS-SILICON PRESSURE TRANSISTORS CRYSTALLIZATION GROWTH |
| ISSN号 | 1009-1963 |
| 通讯作者 | wang yq,chinese acad sci,inst semicond,state key lab surface phys,beijing 100083,peoples r china. |
| 中文摘要 | a novel pulsed rapid thermal processing (prtp) method has been used for realizing solid-phese crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposit ion. the microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic force microscopy. the results indicate that prtp is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality, such as large grain size, small lattice microstrain and smooth surface morphology on low-cost glass substrates. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11908]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YQ,Liao XB,Diao HW,et al. Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing[J]. chinese physics,2002,11(5):492-495. |
| APA | Wang YQ.,Liao XB.,Diao HW.,Zhang SB.,Xu YY.,...&Kong GL.(2002).Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing.chinese physics,11(5),492-495. |
| MLA | Wang YQ,et al."Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing".chinese physics 11.5(2002):492-495. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。