Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
文献类型：期刊论文
| 作者 | Ling CC ; Mui WK ; Lam CH ; Beling CD ; Fung S ; Lui MK ; Cheah KW ; Li KF ; Zhao YW ; Gong M |
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:21页码:3934-3936 |
| 关键词 | ANTIMONIDE |
| ISSN号 | 0003-6951 |
| 通讯作者 | ling cc,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china. 电子邮箱地址: ccling@hku.hk |
| 中文摘要 | positron lifetime, photoluminescence (pl), and hall measurements were performed to study undoped p-type gallium antimonide materials. a 314 ps positron lifetime component was attributed to ga vacancy (v-ga) related defect. isochronal annealing studies showed at 300 degreesc annealing, the 314 ps positron lifetime component and the two observed pl signals (777 and 797 mev) disappeared, which gave clear and strong evidence for their correlation. however, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. although the residual acceptor is generally related to the v-ga defect, at least for cases with annealing temperatures above 300 degreesc, v-ga is not the acceptor responsible for the p-type conduction. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11910]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ling CC,Mui WK,Lam CH,et al. Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. applied physics letters,2002,80(21):3934-3936. |
| APA | Ling CC.,Mui WK.,Lam CH.,Beling CD.,Fung S.,...&Gong M.(2002).Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.applied physics letters,80(21),3934-3936. |
| MLA | Ling CC,et al."Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".applied physics letters 80.21(2002):3934-3936. |
入库方式： OAI收割
来源：半导体研究所
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