Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution
文献类型：期刊论文
| 作者 | Qu SC ; Zhou WH ; Liu FQ ; Chen NF ; Wang ZG ; Pan HY ; Yu DP |
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:19页码:3605-3607 |
| 关键词 | SEMICONDUCTOR CLUSTERS DOPED NANOCRYSTALS OPTICAL-PROPERTIES POLYMER MATRIX MN ELECTROLUMINESCENCE LUMINESCENCE |
| ISSN号 | 0003-6951 |
| 通讯作者 | qu sc,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | monodispersed zns and eu3+-doped zns nanocrystals have been prepared through the co-precipitation reaction of inorganic precursors zncl2, eucl3, and na2s in a water/methanol binary solution. the mean particle sizes are about 3-5 nm. the structures of the as-prepared zns nanoparticles are cubic (zinc blende) as demonstrated by an x-ray powder diffraction. photoluminescence studies showed a stable room temperature emission in the visible spectrum region for all the samples, with a broadening in the emission band and, in particular, a partially overlapped twin peak in the eu3+-doped zns nanocrystals. the experimental results also indicated that eu3+-doped zns nanocrystals, prepared by controlling synthetic conditions, were stable. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11912]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Qu SC,Zhou WH,Liu FQ,et al. Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution[J]. applied physics letters,2002,80(19):3605-3607. |
| APA | Qu SC.,Zhou WH.,Liu FQ.,Chen NF.,Wang ZG.,...&Yu DP.(2002).Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution.applied physics letters,80(19),3605-3607. |
| MLA | Qu SC,et al."Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution".applied physics letters 80.19(2002):3605-3607. |
入库方式： OAI收割
来源：半导体研究所
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