Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:20页码:3769-3771 |
| 关键词 | MOLECULAR-BEAM EPITAXY HIGH-POWER LASER-DIODES NM |
| ISSN号 | 0003-6951 |
| 通讯作者 | liu hy,univ sheffield,dept elect & elect engn,epsrc,cent facil semicond 3 5,sheffield s1 3jd,s yorkshire,england. |
| 中文摘要 | the effect of the growth temperature on the properties of inalas/algaas quantum dots grown on gaas(100) substrates is investigated. the optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesc. the improvements of inalas/algaas quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-iii vacancies. furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesc have been fabricated. lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 ka/cm(2), significantly better than previously reported values for this quantum-dot systems. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11914]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate[J]. applied physics letters,2002,80(20):3769-3771. |
| APA | Xu B.(2002).Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate.applied physics letters,80(20),3769-3771. |
| MLA | Xu B."Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate".applied physics letters 80.20(2002):3769-3771. |
入库方式： OAI收割
来源：半导体研究所
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