Exploration on enhancing innovation capability of functional information materials in China
文献类型：期刊论文
| 作者 | Wang ZG |
| 刊名 | rare metal materials and engineering
 |
| 出版日期 | 2002 |
| 卷号 | 30期号:suppl.页码:26-31 |
| 关键词 | information technology semiconductor micro-structural materials superlattice and quantum well materials quantum wire and quantum dot materials |
| ISSN号 | 1002-185x |
| 通讯作者 | wang zg,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the present status and future prospects of functional information materials, mainly focusing on semiconductor microstructural materials, are introduced first in this paper. then a brief discussion how to enhance the academic level and innovation capability of research and development of functional information materials in china are made. finally the main problems concerning the studies of materials science and technology are analyzed, and possible measures for promoting its development are proposed. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11916]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang ZG. Exploration on enhancing innovation capability of functional information materials in China[J]. rare metal materials and engineering,2002,30(suppl.):26-31. |
| APA | Wang ZG.(2002).Exploration on enhancing innovation capability of functional information materials in China.rare metal materials and engineering,30(suppl.),26-31. |
| MLA | Wang ZG."Exploration on enhancing innovation capability of functional information materials in China".rare metal materials and engineering 30.suppl.(2002):26-31. |
入库方式： OAI收割
来源：半导体研究所
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