中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Space grown semi-insulating gallium arsenide single crystal and its application

文献类型:期刊论文

作者Chen NF ; Zhong XR ; Zhang M ; Lin LY
刊名impact of the gravity level on materials processing and fluid dynamics
出版日期2002
卷号29期号:4页码:537-540
关键词SEMIINSULATING GAAS STOICHIOMETRY DEFECTS
ISSN号0273-1177
通讯作者chen nf,acad sinica,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要low noise field effect transistors and analogue switch integrated circuits (ics) have been fabricated in semi-insulating gallium arsenide (si-gaas) wafers grown in space by direct ion-implantation. the electrical behaviors of the devices and the ics have surpassed those fabricated in the terrestrially grown si-gaas wafers. the highest gain and the lowest noise of the transistors made from space-grown si-gaas wafers are 22.8 db and 0.78 db, respectively. the threshold back-gating voltage of the ics made from space-grown si-gaas wafers is better than 8.5 v the con-elation between the characterizations of materials and devices is studied systematically. (c) 2002 cospar. published by elsevier science ltd. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11920]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen NF,Zhong XR,Zhang M,et al. Space grown semi-insulating gallium arsenide single crystal and its application[J]. impact of the gravity level on materials processing and fluid dynamics,2002,29(4):537-540.
APA Chen NF,Zhong XR,Zhang M,&Lin LY.(2002).Space grown semi-insulating gallium arsenide single crystal and its application.impact of the gravity level on materials processing and fluid dynamics,29(4),537-540.
MLA Chen NF,et al."Space grown semi-insulating gallium arsenide single crystal and its application".impact of the gravity level on materials processing and fluid dynamics 29.4(2002):537-540.

入库方式: OAI收割

来源:半导体研究所

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