Space grown semi-insulating gallium arsenide single crystal and its application
文献类型：期刊论文
| 作者 | Chen NF ; Zhong XR ; Zhang M ; Lin LY |
| 刊名 | impact of the gravity level on materials processing and fluid dynamics
 |
| 出版日期 | 2002 |
| 卷号 | 29期号:4页码:537-540 |
| 关键词 | SEMIINSULATING GAAS STOICHIOMETRY DEFECTS |
| ISSN号 | 0273-1177 |
| 通讯作者 | chen nf,acad sinica,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | low noise field effect transistors and analogue switch integrated circuits (ics) have been fabricated in semi-insulating gallium arsenide (si-gaas) wafers grown in space by direct ion-implantation. the electrical behaviors of the devices and the ics have surpassed those fabricated in the terrestrially grown si-gaas wafers. the highest gain and the lowest noise of the transistors made from space-grown si-gaas wafers are 22.8 db and 0.78 db, respectively. the threshold back-gating voltage of the ics made from space-grown si-gaas wafers is better than 8.5 v the con-elation between the characterizations of materials and devices is studied systematically. (c) 2002 cospar. published by elsevier science ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11920]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Zhong XR,Zhang M,et al. Space grown semi-insulating gallium arsenide single crystal and its application[J]. impact of the gravity level on materials processing and fluid dynamics,2002,29(4):537-540. |
| APA | Chen NF,Zhong XR,Zhang M,&Lin LY.(2002).Space grown semi-insulating gallium arsenide single crystal and its application.impact of the gravity level on materials processing and fluid dynamics,29(4),537-540. |
| MLA | Chen NF,et al."Space grown semi-insulating gallium arsenide single crystal and its application".impact of the gravity level on materials processing and fluid dynamics 29.4(2002):537-540. |
入库方式： OAI收割
来源：半导体研究所
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