中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Content analyses in GaMnAs by double-crystal X-ray diffraction

文献类型:期刊论文

作者Chen NF ; Xiu HX ; Yang JL ; Wu JL ; Zhong XR ; Lin LY
刊名chinese science bulletin
出版日期2002
卷号47期号:4页码:274-275
关键词GaMnAs diluted magnetic semiconductor X-ray diffraction lattice parameter content of Mn SEMICONDUCTOR
ISSN号1001-6538
通讯作者chen nf,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要a model for analyzing point defects in compound crystals was improved. based on this modified model, a method for measuring mn content in gamnas was established. a technique for eliminating the zero-drift-error was also established in the experiments of x-ray diffraction. with these methods, the mn content in gamnas single crystals fabricated by the ion-beam epitaxy system was analyzed.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11922]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen NF,Xiu HX,Yang JL,et al. Content analyses in GaMnAs by double-crystal X-ray diffraction[J]. chinese science bulletin,2002,47(4):274-275.
APA Chen NF,Xiu HX,Yang JL,Wu JL,Zhong XR,&Lin LY.(2002).Content analyses in GaMnAs by double-crystal X-ray diffraction.chinese science bulletin,47(4),274-275.
MLA Chen NF,et al."Content analyses in GaMnAs by double-crystal X-ray diffraction".chinese science bulletin 47.4(2002):274-275.

入库方式: OAI收割

来源:半导体研究所

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