Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
文献类型：期刊论文
| 作者 | Cui LJ ; Zeng YP ; Wang BQ ; Zhu ZP ; Lin LY ; Jiang CP ; Guo SL ; Chu JH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:17页码:3132-3134 |
| 关键词 | QUANTUM-WELLS HETEROSTRUCTURES HEMTS B->O GAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | cui lj,chinese acad sci,inst semicond,novel mat lab,beijing 100083,peoples r china. |
| 中文摘要 | shubnikov-de haas measurements were carried out for in0.52al0.48as/inxga1-xas metamorphic high-electron-mobility-transistor structures grown on gaas substrates with different indium contents and/or different si delta-doping concentrations. zero-field (b-->0) spin splitting was found in samples with stronger conduction band bending in the ingaas well. it was shown that the dominant spin splitting mechanism is attributed to the contribution by the rashba term. we found that zero-field spin splitting not only occurs in the ground electron subband, but also in the first excited electron subband for a sample with si delta-doping concentration of 6x10(12) cm(-2). we propose that this in0.52al0.48as/inxga1-xas metamorphic high-electron-mobility-transistor structure grown on gaas may be a promising candidate spin-polarized field-effect transistors. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11932]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cui LJ,Zeng YP,Wang BQ,et al. Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements[J]. applied physics letters,2002,80(17):3132-3134. |
| APA | Cui LJ.,Zeng YP.,Wang BQ.,Zhu ZP.,Lin LY.,...&Chu JH.(2002).Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements.applied physics letters,80(17),3132-3134. |
| MLA | Cui LJ,et al."Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements".applied physics letters 80.17(2002):3132-3134. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。