Creation and suppression of point defects through a kick-out substitution process of Fe in InP
文献类型：期刊论文
| 作者 | Zhao YW ; Dong HW ; Chen YH ; Zhang YH ; Jiao JH ; Zhao JQ ; Lin LY ; Fung S |
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:16页码:2878-2879 |
| 关键词 | SEMIINSULATING INP ZN DIFFUSION COMPLEXES PHOSPHIDE MECHANISM CRYSTALS |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhao yw,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | indium antisite defect in-p-related photoluminescence has been observed in fe-diffused semi-insulating (si) inp. compared to annealed undoped or fe-predoped si inp, there are fewer defects in si inp obtained by long-duration, high-temperature fe diffusion. the suppression of the formation of point defects in fe-diffused si inp can be explained in terms of the complete occupation by fe at indium vacancy. the in-p defect is enhanced by the indium interstitial that is caused by the kick out of in and the substitution at the indium site of fe in the diffusion process. through these fe-diffusion results, the nature of the defects in annealed undoped si inp is better understood. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11940]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YW,Dong HW,Chen YH,et al. Creation and suppression of point defects through a kick-out substitution process of Fe in InP[J]. applied physics letters,2002,80(16):2878-2879. |
| APA | Zhao YW.,Dong HW.,Chen YH.,Zhang YH.,Jiao JH.,...&Fung S.(2002).Creation and suppression of point defects through a kick-out substitution process of Fe in InP.applied physics letters,80(16),2878-2879. |
| MLA | Zhao YW,et al."Creation and suppression of point defects through a kick-out substitution process of Fe in InP".applied physics letters 80.16(2002):2878-2879. |
入库方式： OAI收割
来源：半导体研究所
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