中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

文献类型:期刊论文

作者Chang K ; Xia JB ; Peeters FM
刊名physical review b
出版日期2002
卷号65期号:11页码:art.no.115209
关键词ELECTRICAL SPIN INJECTION ZNSE/ZN1-XMNXSE HETEROSTRUCTURE POLARIZED TRANSPORT QUANTUM-WELLS SCATTERING INTERFACE DEVICE
ISSN号1098-0121
通讯作者chang k,chinese acad sci,inst semicond,nlsm,beijing 100083,peoples r china.
中文摘要ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. the tunneling magnetoresistance (tmr) of the system exhibits oscillating behavior when the magnetic field is varied. an interesting beat pattern in the tmr and spin polarization is found for different nonmagnetic semiconductor/diluted magnetic semiconductor double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are split by the s-d exchange interaction.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11950]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chang K,Xia JB,Peeters FM. Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures[J]. physical review b,2002,65(11):art.no.115209.
APA Chang K,Xia JB,&Peeters FM.(2002).Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures.physical review b,65(11),art.no.115209.
MLA Chang K,et al."Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures".physical review b 65.11(2002):art.no.115209.

入库方式: OAI收割

来源:半导体研究所

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