Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures
文献类型:期刊论文
作者 | Chang K ; Xia JB ; Peeters FM |
刊名 | physical review b
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出版日期 | 2002 |
卷号 | 65期号:11页码:art.no.115209 |
关键词 | ELECTRICAL SPIN INJECTION ZNSE/ZN1-XMNXSE HETEROSTRUCTURE POLARIZED TRANSPORT QUANTUM-WELLS SCATTERING INTERFACE DEVICE |
ISSN号 | 1098-0121 |
通讯作者 | chang k,chinese acad sci,inst semicond,nlsm,beijing 100083,peoples r china. |
中文摘要 | ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. the tunneling magnetoresistance (tmr) of the system exhibits oscillating behavior when the magnetic field is varied. an interesting beat pattern in the tmr and spin polarization is found for different nonmagnetic semiconductor/diluted magnetic semiconductor double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are split by the s-d exchange interaction. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/11950] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chang K,Xia JB,Peeters FM. Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures[J]. physical review b,2002,65(11):art.no.115209. |
APA | Chang K,Xia JB,&Peeters FM.(2002).Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures.physical review b,65(11),art.no.115209. |
MLA | Chang K,et al."Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures".physical review b 65.11(2002):art.no.115209. |
入库方式: OAI收割
来源:半导体研究所
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