Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process
文献类型：期刊论文
| 作者 | Tan LW ; Zan YD ; Wang J ; Wang QY ; Yu YH ; Wang SR ; Liu ZL ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 236期号:1-3页码:261-266 |
| 关键词 | metalorganic chemical vapor deposition CHEMICAL-VAPOR-DEPOSITION EPITAXIAL-GROWTH AL2O3 FILMS SI |
| ISSN号 | 0022-0248 |
| 通讯作者 | tan lw,chinese acad sci,inst semicond,novel semiconductor mat lab,beijing 100083,peoples r china. |
| 中文摘要 | gamma-al2o3 films were grown on si (10 0) substrates using the sources of tma (ai(ch3)(3)) and o-2 by very low-pressure chemical vapor deposition. the effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. it has been found that the,gamma-al2o3 film prepared at a temperature of 1000degreesc has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between 0, and si substrate in the initial growth stage. however, under a temperature-varied multi-step process the properties of gamma-al2o3 film were improved. the films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. the uniformity of gamma-al2o3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. in order to improve the crystalline quality, the gamma-al2o3 films were annealed for i h in o-2 atmosphere. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11960]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tan LW,Zan YD,Wang J,et al. Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process[J]. journal of crystal growth,2002,236(1-3):261-266. |
| APA | Tan LW.,Zan YD.,Wang J.,Wang QY.,Yu YH.,...&Lin LY.(2002).Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process.journal of crystal growth,236(1-3),261-266. |
| MLA | Tan LW,et al."Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process".journal of crystal growth 236.1-3(2002):261-266. |
入库方式： OAI收割
来源：半导体研究所
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