中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam

文献类型:期刊论文

作者Liao MY ; Feng ZH ; Yang SY ; Chai CL ; Liu ZK ; Yang JL ; Wang ZG
刊名solid state communications
出版日期2002
卷号121期号:5页码:287-290
关键词luminescence semiconductors ion-beam deposition OPTICAL-PROPERTIES A-SI1-XCX-H FILMS POROUS SILICON NANOCRYSTALS LUMINESCENCE MECHANISM
ISSN号0038-1098
通讯作者liao my,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要the temperature dependence of photoluminescence (pl) from a-c:h film deposited by ch3+ ion beam has been performed and an anomalous behavior has been reported. a transition temperature at which the pl intensity, peak position and full width at the half maximum change sharply was observed. it is proposed that different structure units. at least three, are responsible for such behavior. above the transition point. increasing temperature will lead to the dominance of non-radiative recombination process, which quenches the pl overall and preferentially the red part, possible emission mechanisms have been discussed. (c) 2002 elsevier science ltd. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11966]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liao MY,Feng ZH,Yang SY,et al. Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam[J]. solid state communications,2002,121(5):287-290.
APA Liao MY.,Feng ZH.,Yang SY.,Chai CL.,Liu ZK.,...&Wang ZG.(2002).Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam.solid state communications,121(5),287-290.
MLA Liao MY,et al."Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam".solid state communications 121.5(2002):287-290.

入库方式: OAI收割

来源:半导体研究所

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