Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam
文献类型：期刊论文
| 作者 | Liao MY ; Feng ZH ; Yang SY ; Chai CL ; Liu ZK ; Yang JL ; Wang ZG |
| 刊名 | solid state communications
 |
| 出版日期 | 2002 |
| 卷号 | 121期号:5页码:287-290 |
| 关键词 | luminescence semiconductors ion-beam deposition OPTICAL-PROPERTIES A-SI1-XCX-H FILMS POROUS SILICON NANOCRYSTALS LUMINESCENCE MECHANISM |
| ISSN号 | 0038-1098 |
| 通讯作者 | liao my,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | the temperature dependence of photoluminescence (pl) from a-c:h film deposited by ch3+ ion beam has been performed and an anomalous behavior has been reported. a transition temperature at which the pl intensity, peak position and full width at the half maximum change sharply was observed. it is proposed that different structure units. at least three, are responsible for such behavior. above the transition point. increasing temperature will lead to the dominance of non-radiative recombination process, which quenches the pl overall and preferentially the red part, possible emission mechanisms have been discussed. (c) 2002 elsevier science ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11966]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liao MY,Feng ZH,Yang SY,et al. Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam[J]. solid state communications,2002,121(5):287-290. |
| APA | Liao MY.,Feng ZH.,Yang SY.,Chai CL.,Liu ZK.,...&Wang ZG.(2002).Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam.solid state communications,121(5),287-290. |
| MLA | Liao MY,et al."Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam".solid state communications 121.5(2002):287-290. |
入库方式： OAI收割
来源：半导体研究所
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