Valence band structures of the InAs/GaAs quantum ring
文献类型：期刊论文
| 作者 | Li SS ; Xia JB |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2002 |
| 卷号 | 91期号:5页码:3227-3231 |
| 关键词 | EFFECTIVE-MASS THEORY DOTS |
| ISSN号 | 0021-8979 |
| 通讯作者 | li ss,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | in the framework of effective-mass envelope function theory, the valence energy subbands and optical transitions of the inas/gaas quantum ring are calculated by using a four-band valence band model. our model can be used to calculate the hole states of quantum wells, quantum wires, and quantum dots. the effect of finite offset and valence band mixing are taken into account. the energy levels of the hole are calculated in the different shapes of rings. our calculations show that the effect of the difference between effective masses of holes in different materials on the valence subband structures is significant. our theoretical results are consistent with the conclusion of the recent experimental measurements and should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11968]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li SS,Xia JB. Valence band structures of the InAs/GaAs quantum ring[J]. journal of applied physics,2002,91(5):3227-3231. |
| APA | Li SS,&Xia JB.(2002).Valence band structures of the InAs/GaAs quantum ring.journal of applied physics,91(5),3227-3231. |
| MLA | Li SS,et al."Valence band structures of the InAs/GaAs quantum ring".journal of applied physics 91.5(2002):3227-3231. |
入库方式： OAI收割
来源：半导体研究所
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