Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure
文献类型：期刊论文
| 作者 | Fang ZL ; Li GH ; Han HX ; Ding K ; Chen Y ; Peng CL ; Yuan SX |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2002 |
| 卷号 | 21期号:1页码:28-32 |
| 关键词 | Te isoelectronic traps pressure photoluminescence MOLECULAR-BEAM EPITAXY ZNSE1-XTEX ALLOYS EMISSION CENTERS BEHAVIOR |
| ISSN号 | 1001-9014 |
| 通讯作者 | fang zl,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the photoluminescence (pl) of znse0.92ted0.08/znse superlattice quantum wells at 77k under hydrostatic pressure up to 7.8 gpa was studied. strong pl peaks from excitons trapped in isoelectronic traps in znse0.92te0.08 were observed. it was found that the pressure coefficients of the pl, peaks from te traps are about half of that of znse. it demonstrates the localized characteristic of the potential of te isoelectronic. traps. the excitons transition between te traps in znse1 te-- x(x) and (cdse)(1) /(znse)(3) superlattice was also investigated. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11974]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fang ZL,Li GH,Han HX,et al. Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure[J]. journal of infrared and millimeter waves,2002,21(1):28-32. |
| APA | Fang ZL.,Li GH.,Han HX.,Ding K.,Chen Y.,...&Yuan SX.(2002).Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure.journal of infrared and millimeter waves,21(1),28-32. |
| MLA | Fang ZL,et al."Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure".journal of infrared and millimeter waves 21.1(2002):28-32. |
入库方式： OAI收割
来源：半导体研究所
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