Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers
文献类型：期刊论文
| 作者 | Leung BH ; Chan NH ; Fong WK ; Zhu CF ; Ng SW ; Lui HF ; Tong KY ; Surya C ; Lu LW ; Ge WK |
| 刊名 | ieee transactions on electron devices
 |
| 出版日期 | 2002 |
| 卷号 | 49期号:2页码:314-318 |
| 关键词 | deep level transient Fourier spectroscopy (DLTFS) gallium nitride (GaN) intermediate-temperature buffer layer (ITBF) low-frequency noise RESONANT-TUNNELING DIODES GENERATION-RECOMBINATION NOISE RANDOM-TELEGRAPH NOISE ULTRAVIOLET PHOTODETECTORS DEVICES |
| ISSN号 | 0018-9383 |
| 通讯作者 | leung bh,hong kong polytech univ,dept elect & informat engn,hong kong,hong kong,peoples r china. |
| 中文摘要 | gallium nitride (gan)-based schottky junctions were fabricated by rf-plasma-assisted molecular beam epitaxy (mbe). the gan epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (ltbl) grown at 500 degreesc and an intermediate-temperature buffer layer (itbl) deposited at 690 degreesc. low-frequency excess noise and deep level transient fourier spectroscopy (dltfs) were measured from the devices. the results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the gan films grown with an itbl. compared to the control sample, which was grown with just a conventional ltbl, a three-order-of-magnitude reduction in the deep levels 0.4 ev below the conduction band minimum (ec) is observed in the bulk of the thin films using dltfs measurements. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11994]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Leung BH,Chan NH,Fong WK,et al. Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers[J]. ieee transactions on electron devices,2002,49(2):314-318. |
| APA | Leung BH.,Chan NH.,Fong WK.,Zhu CF.,Ng SW.,...&Ge WK.(2002).Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers.ieee transactions on electron devices,49(2),314-318. |
| MLA | Leung BH,et al."Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers".ieee transactions on electron devices 49.2(2002):314-318. |
入库方式： OAI收割
来源：半导体研究所
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