ECR plasma in growth of cubic GaN by low pressure MOCVD
文献类型：期刊论文
| 作者 | Gu B ; Xu Y ; Qin FW ; Wang SS ; Sui Y ; Wang ZG |
| 刊名 | plasma chemistry and plasma processing
 |
| 出版日期 | 2002 |
| 卷号 | 22期号:1页码:159-174 |
| 关键词 | ECR plasma cubic GaN low pressure MOCVD MOLECULAR-BEAM EPITAXY CYCLOTRON-RESONANCE PLASMA LIGHT-EMITTING-DIODES VAPOR-PHASE EPITAXY GALLIUM NITRIDE GAAS DIMETHYLHYDRAZINE |
| ISSN号 | 0272-4324 |
| 通讯作者 | gu b,dalian univ technol,state key lab mat modificat laser ion & elect bea,dept electromagnet engn,dalian 116024,peoples r china. |
| 中文摘要 | to heteroepitaxally grow the crystalline cubic-gan (c-gan) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group iii nitride materials. we have obtained the crystalline c-gan film and the heteroepitaxial interface between c-gan and gaas (001) substrate by the ecr plasma-assisted metal organic chemical vapor deposition (pa-mocvd) under low-pressure and low-temperature (similar to600degreesc) on a homemade ecr-plasma semiconductor processing device (espd). in order to decrease the growth temperature, the ecr plasma source was adopted as the activated nitrogen source, therefore the working pressure of mocvd was decreased down to the region less than 1 pa. to eliminate the damages from energetic ions of current plasma source, a multi-cusp cavity,coupling ecr plasma source (mep) was selected to use in our experiment. to decrease the strain and dislocations induced from the large lattice mismatch between c-gan and gaas substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated the experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-gan film and interface between c-gan and gaas(001), and the roles of ecr plasma are described in this contribution. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12002]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gu B,Xu Y,Qin FW,et al. ECR plasma in growth of cubic GaN by low pressure MOCVD[J]. plasma chemistry and plasma processing,2002,22(1):159-174. |
| APA | Gu B,Xu Y,Qin FW,Wang SS,Sui Y,&Wang ZG.(2002).ECR plasma in growth of cubic GaN by low pressure MOCVD.plasma chemistry and plasma processing,22(1),159-174. |
| MLA | Gu B,et al."ECR plasma in growth of cubic GaN by low pressure MOCVD".plasma chemistry and plasma processing 22.1(2002):159-174. |
入库方式： OAI收割
来源：半导体研究所
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