Electroluminescence from Au/(SiO2/Si/SiO2) nanometer double barrier/p-Si structures and its mechanism
文献类型：期刊论文
| 作者 | Qin GG ; Chen Y ; Ran GZ ; Zhang BR ; Wang SH ; Qin G ; Ma ZC ; Zong WH ; Ren SF |
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 2001 |
| 卷号 | 13期号:50页码:11751-11761 |
| 关键词 | P-SI PHOTOLUMINESCENCE |
| ISSN号 | 0953-8984 |
| 通讯作者 | qin gg,peking univ,dept phys,beijing 100871,peoples r china. |
| 中文摘要 | sio2/si/sio2 nanometer double barriers (sssndb) with si layers of twenty-seven different thicknesses in a range of 1-5 nm with an interval of 0.2 nm have been deposited on p-si substrates using two-target alternative magnetron sputtering. electroluminescence (el) from the semitransparent au film/sssndb/p-si diodes and from a control diode without any si layer have been observed under forward bias. each el spectrum of all these diodes can be fitted by two gaussian bands with peak energies of 1.82 and 2.25 ev, and full widths at half maximum of 0.38 and 0.69 ev, respectively. it is found that the current, el peak wavelength and intensities of the two gaussian bands of the au/sssndb/p-si structure oscillate synchronously with increasing si layer thickness with a period corresponding to half a de broglie wavelength of the carriers. the experimental results strongly indicate that the el originates mainly from two types of luminescence centres with energies of 1.82 and 2.25 ev in the sio2 barriers, rather than from the nanometer si well in the sssndb. the el mechanism is discussed in detail. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12004]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Qin GG,Chen Y,Ran GZ,et al. Electroluminescence from Au/(SiO2/Si/SiO2) nanometer double barrier/p-Si structures and its mechanism[J]. journal of physics-condensed matter,2001,13(50):11751-11761. |
| APA | Qin GG.,Chen Y.,Ran GZ.,Zhang BR.,Wang SH.,...&Ren SF.(2001).Electroluminescence from Au/(SiO2/Si/SiO2) nanometer double barrier/p-Si structures and its mechanism.journal of physics-condensed matter,13(50),11751-11761. |
| MLA | Qin GG,et al."Electroluminescence from Au/(SiO2/Si/SiO2) nanometer double barrier/p-Si structures and its mechanism".journal of physics-condensed matter 13.50(2001):11751-11761. |
入库方式： OAI收割
来源：半导体研究所
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