Binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells
文献类型：期刊论文
| 作者 | Liu JJ ; Zhang SF ; Yang GC ; Li SS |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 19期号:1页码:114-116 |
| 关键词 | BOUND EXCITONS 2-DIMENSIONAL SEMICONDUCTORS BIEXCITONS DONORS |
| ISSN号 | 0256-307x |
| 通讯作者 | liu jj,hebei normal univ,dept phys,shijiazhuang 050016,peoples r china. |
| 中文摘要 | using a simple two-parameter wavefunction, we calculate variationally the binding energy of positively and negatively charged excitons in gaas/alxga1-xas quantum wells for well widths from 10 to 300angstrom. we consider the effect of effective mass, dielectric constant mismatch in the two materials, and the whole correlation among the particles. the results are discussed and compared in detail with previous experimental and theoretical results, which show fair agreement with them. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12006]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JJ,Zhang SF,Yang GC,et al. Binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells[J]. chinese physics letters,2002,19(1):114-116. |
| APA | Liu JJ,Zhang SF,Yang GC,&Li SS.(2002).Binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells.chinese physics letters,19(1),114-116. |
| MLA | Liu JJ,et al."Binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells".chinese physics letters 19.1(2002):114-116. |
入库方式： OAI收割
来源：半导体研究所
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