Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films
文献类型：期刊论文
| 作者 | Zhang SB ; Kong GL ; Xu YY ; Wang YQ ; Diao HW ; Liao XB |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2002 |
| 卷号 | 51期号:1页码:111-114 |
| 关键词 | amorphous silicon transient photoconductivity light-induced change |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhang sb,chinese acad sci,state lab surface phys,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | transient photoconductivity and its light-induced change were investigated by using a model 4400 boxcar averager and signal processor for lightly boron-doped a-si : h films. the transient photoconductivities of the sample were measured at an annealed state and light-soaked states. the transient decay process of the photoconductivity can be fitted fairly well by a second-order exponential decay function, which indicates that the decay process is related with two different traps. it is noteworthy that the photoconductivity of the film increases after light-soaking. this may be due to the deactivity of the boron acceptor b-4(-), and thus some of the boron atoms can no longer act as acceptors and drives e-f to shifts upward. consequently, the number of effective recombination centers may be reduced and so the photoconductivity increases. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12012]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SB,Kong GL,Xu YY,et al. Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films[J]. acta physica sinica,2002,51(1):111-114. |
| APA | Zhang SB,Kong GL,Xu YY,Wang YQ,Diao HW,&Liao XB.(2002).Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films.acta physica sinica,51(1),111-114. |
| MLA | Zhang SB,et al."Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films".acta physica sinica 51.1(2002):111-114. |
入库方式： OAI收割
来源：半导体研究所
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