Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Xu B ; Jiang DS; Wang ZG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 234期号:2-3页码:354-358 |
| 关键词 | nanostructures molecular beam epitaxy semiconductor III-V materials laser diodes 1.3 MU-M CONTINUOUS-WAVE OPERATION TEMPERATURE-DEPENDENCE LASING CHARACTERISTICS 1.3-MU-M PHOTOLUMINESCENCE GAIN |
| ISSN号 | 0022-0248 |
| 通讯作者 | jia r,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have fabricated self-organized inas/gaas quantum dots (qds) capped by 1 nm in0.2al0.8as and 5 nm in0.2ga0.8as strain-reducing layer (srl). the luminescence emission at a long wavelength of 1.33 mum with narrower half width is realized. a wider energy separation between the ground and first excited radiative transitions of up to 102mev was observed at room temperature. furthermore, the comparative study proves that luminescence properties of inas/gaas qds overgrown with combined inalas and ingaas srls are much better than that of one capped with ingaas or inalas srl. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12016]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Jiang DS,Wang ZG. Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots[J]. journal of crystal growth,2002,234(2-3):354-358. |
| APA | Xu B,Jiang DS,&Wang ZG.(2002).Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots.journal of crystal growth,234(2-3),354-358. |
| MLA | Xu B,et al."Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots".journal of crystal growth 234.2-3(2002):354-358. |
入库方式： OAI收割
来源：半导体研究所
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