Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN
文献类型：期刊论文
| 作者 | Xu XL ; Liu HT ; Shi CS ; Zhao YW ; Fung S ; Beling CD |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2001 |
| 卷号 | 90期号:12页码:6130-6134 |
| 关键词 | LIGHT-EMITTING DIODES GALLIUM NITRIDE YELLOW LUMINESCENCE ELECTRON PHOTOLUMINESCENCE EPILAYERS VACANCIES INTERFACE MECHANISM ENERGY |
| ISSN号 | 0021-8979 |
| 通讯作者 | xu xl,univ sci & technol china,dept phys,hefei 230026,anhui,peoples r china. |
| 中文摘要 | in our recent report, [xu , appl. phys. lett. 76, 152 (2000)], profile distributions of five elements in the gan/sapphire system have been obtained using secondary ion-mass spectroscopy. the results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. the further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (o-n), but also from the gallium-site silicon (si-ga) donors, with activation energies 2 mev (for o-n) and 42 mev (for si-ga), respectively. on the other hand, al incorporated on the ga sublattice reduces the concentration of compensating ga-vacancy acceptors. the two-donor two-layer conduction, including hall carrier concentration and mobility, has been modeled by separating the gan film into a thin interface layer and a main bulk layer of the gan film. the bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. si-ga and o-n should also be shallow donors and v-ga-o or v-ga-al should be compensation sites in the bulk layer. the best fits for the hall mobility and the hall concentration in the bulk layer were obtained by taking the acceptor concentration n-a=1.8x10(17) cm(-3), the second donor concentration n-d2=1.0x10(18) cm(-3), and the compensation ratio c=n-a/n-d1=0.6, which is consistent with rode's theory. saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12028]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu XL,Liu HT,Shi CS,et al. Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN[J]. journal of applied physics,2001,90(12):6130-6134. |
| APA | Xu XL,Liu HT,Shi CS,Zhao YW,Fung S,&Beling CD.(2001).Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN.journal of applied physics,90(12),6130-6134. |
| MLA | Xu XL,et al."Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN".journal of applied physics 90.12(2001):6130-6134. |
入库方式： OAI收割
来源：半导体研究所
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